 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| SPP11N65C3, SPA11N65C3 SPI11N65C3 Cool MOSTM Power Transistor Feature * New revolutionary high voltage technology * Ultra low gate charge * Periodic avalanche rated * Extreme dv/dt rated * High peak current capability * Improved transconductance P-TO220-3-31 1 2 3 VDS RDS(on) ID P-TO262-3-1 P-TO220-3-31 650 0.38 11 V A P-TO220-3-1 Type SPP11N65C3 SPA11N65C3 SPI11N65C3 Package P-TO220-3-1 P-TO262-3-1 Ordering Code Q67040-S4557 Q67040-S4561 Marking 11N65C3 11N65C3 11N65C3 P-TO220-3-31 Q67040-S4554 Maximum Ratings Parameter Symbol ID Value SPP_I SPA Unit Continuous drain current TC = 25 C TC = 100 C A 11 7 11 1) 71) 33 340 0.6 4 20 30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=2.5A, VDD=50V ID puls EAS EAR IAR VGS VGS Ptot 33 340 0.6 4 20 30 A mJ Avalanche energy, repetitive tAR limited by Tjmax2) ID=4A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage A V W Gate source voltage AC (f >1Hz) Power dissipation, TC = 25C 125 33 Operating and storage temperature T j , Tstg -55...+150 C Page 1 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 Maximum Ratings Parameter Symbol Value Unit Drain Source voltage slope VDS = 480 V, ID = 11 A, Tj = 125 C dv/dt 50 V/ns Thermal Characteristics Parameter Symbol min. RthJC Values typ. max. Unit Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, 1.6 mm (0.063 in.) from case for 10s 4) - 35 - 1 3.8 62 80 62 260 K/W RthJC_FP RthJA RthJA_FP RthJA Tsold - C Electrical Characteristics, at Tj=25C unless otherwise specified Parameter Symbol Conditions min. Values typ. max. Unit Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 650 5) Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current VGS(th) I DSS ID=500A, V GS=V DS VDS=600V, V GS=0V, Tj=25C Tj=150C 730 3 0.1 0.34 0.92 0.86 3.9 V V(BR)DS VGS=0V, ID=4A 2.1 - A 1 100 100 0.38 nA Gate-source leakage current I GSS VGS=20V, V DS=0V VGS=10V, ID=7A Tj=25C Tj=150C Drain-source on-state resistance RDS(on) Gate input resistance RG f=1MHz, open drain Page 2 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 Electrical Characteristics Parameter Transconductance Input capacitance Output capacitance Reverse transfer capacitance Symbol gfs Ciss Coss Crss VGS=0V, VDS=0V to 480V Conditions min. VDS2*ID*R DS(on)max, ID=7A VGS=0V, VDS=25V, f=1MHz Values typ. max. Unit - 8.3 1200 390 30 45 85 10 5 44 5 70 9 S pF Effective output capacitance,6) Co(er) energy related Effective output capacitance,7) Co(tr) time related Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg td(on) tr td(off) tf VDD=380V, VGS=0/10V, ID=11A, RG=6.8 - ns V DD=480V, ID=11A - 5.5 22 45 5.5 60 - nC V DD=480V, ID=11A, V GS=0 to 10V V(plateau) VDD=480V, ID=11A V 1Limited only by maximum temperature 2Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AR AV 3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. 4Soldering temperature for TO-263: 220C, reflow 5HTRB @ 1000h, 600V, T jmax resp. accelerated HTRB @ 168h, 600V, Tj = 175C according to JEDEC A108, MIL-STD 750/1038-1040, 1042 6C o(er) is a fixed capacitance that gives the same stored energy as Coss while V DS is rising from 0 to 80% VDSS. 7C o(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Page 3 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 Electrical Characteristics Parameter Inverse diode continuous forward current Inverse diode direct current, pulsed Inverse diode forward voltage Reverse recovery time Reverse recovery charge Peak reverse recovery current Peak rate of fall of reverse recovery current Typical Transient Thermal Characteristics Symbol SPP_B Rth1 Rth2 Rth3 Rth4 Rth5 Rth6 0.015 0.03 0.056 0.197 0.216 0.083 Tj Symbol IS ISM VSD trr Qrr Irrm dirr /dt Conditions min. TC=25C Values typ. 1 400 6 41 1200 max. 11 33 1.2 600 - Unit A V GS=0V, IF=IS V R=480V, IF=IS , diF/dt=100A/s - V ns C A A/s Tj=25C Value SPA 0.15 0.03 0.056 0.194 0.413 2.522 R th1 Unit K/W Symbol Cth1 Cth2 Cth3 Cth4 Cth5 Cth6 R th,n T case Value SPP_B 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 SPA 0.0001878 0.0007106 0.000988 0.002791 0.007401 0.412 Unit Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 1 Power dissipation Ptot = f (TC) 140 SPP11N65C3 2 Power dissipation FullPAK Ptot = f (TC) 35 W 120 110 100 W 25 Ptot 90 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 Ptot 20 15 10 5 C 160 0 0 20 40 60 80 100 120 TC C 160 TC 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TC=25C 10 2 4 Safe operating area FullPAK ID = f (VDS) parameter: D = 0, TC = 25C 10 2 A A 10 1 10 1 ID 10 0 ID 10 0 10 -1 tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 -1 tp = 0.0008 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms DC 10 -2 0 10 10 1 10 2 V VDS 10 3 10 -2 0 10 10 1 10 2 10 V VDS 3 Page 5 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 5 Transient thermal impedance FullPAK ZthJC = f (tp) parameter: D = tp/t 10 1 6 Typ. output characteristic ID = f (VDS); Tj =25C parameter: tp = 10 s, VGS 40 K/W 10 0 A 32 28 20V 10V 8V 7V ZthJC 10 -1 ID 24 20 6,5V 10 -2 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 6V 16 12 8 4 5,5V 5V 4,5V 10 -3 10 -4 -7 -6 -5 -4 -3 -2 -1 10 10 10 10 10 10 10 1 s 10 0 0 3 6 9 12 15 18 21 tp 27 V VDS 7 Typ. output characteristic ID = f (VDS); Tj =150C parameter: tp = 10 s, VGS 22 8 Typ. drain-source on resistance RDS(on)=f(ID) parameter: Tj=150C, VGS 2 A 18 16 20V 8V 7V 7.5V 4V 6V 4.5V 5V 5.5V 6V ID 14 12 10 8 6 4 2 0 0 5 10 15 4V 5V 5.5V RDS(on) 4.5V 1.6 1.4 1.2 1 0.8 0.6 6.5V 8V 20V 2 4 6 8 10 12 14 16 V VDS 25 0.4 0 A 20 ID Page 6 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 9 Drain-source on-state resistance RDS(on) = f (Tj) parameter : ID = 7 A, VGS = 10 V 2.1 SPP11N65C3 10 Typ. transfer characteristics ID = f ( VGS ); VDS 2 x ID x RDS(on)max parameter: tp = 10 s 40 A 32 25C 1.8 1.6 1.4 28 RDS(on) ID 1.2 1 0.8 0.6 98% 24 20 16 12 150C 0.4 0.2 0 -60 -20 20 typ 8 4 0 0 60 100 C 180 2 4 6 8 10 12 Tj V 15 VGS 11 Typ. gate charge 12 Forward characteristics of body diode IF = f (VSD) parameter: Tj , tp = 10 s 10 2 SPP11N65C3 VGS = f (QGate) parameter: ID = 11 A pulsed 16 SPP11N65C3 V A 12 VGS 8 6 IF 10 0 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 -1 0 10 0,2 VDS max 10 1 0,8 VDS max 4 2 0 0 10 20 30 40 50 nC 70 0.4 0.8 1.2 1.6 2 2.4 V 3 QGate Page 7 VSD 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 13 Typ. switching time t = f (ID), inductive load, Tj =125C par.: VDS =380V, VGS=0/+13V, RG=6.8 ns 70 14 Typ. switching time t = f (RG ), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, ID=11 A 350 60 55 50 45 td(off) ns 250 t t 40 35 30 25 20 15 10 5 0 0 tr tf td(on) 200 150 td(off) td(on) tr tf 100 50 2 4 6 8 A ID 12 0 0 10 20 30 40 50 70 RG 15 Typ. drain current slope 16 Typ. drain source voltage slope di/dt = f(RG ), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=11A 3000 dv/dt = f(RG), inductive load, Tj = 125C par.: VDS =380V, VGS=0/+13V, ID=11A 140 V/ns 120 110 dv/dt(off) A/s di/dt 2000 dv/dt di/dt(off) 100 90 80 1500 70 60 1000 50 40 30 20 dv/dt(on) 500 di/dt(on) 0 0 20 40 60 80 120 10 0 10 20 30 40 50 70 RG RG Page 8 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 17 Typ. switching losses E = f (ID), inductive load, Tj=125C par.: VDS =380V, VGS=0/+13V, RG=6.8 0.04 18 Typ. switching losses E = f(RG), inductive load, T j=125C par.: VDS =380V, VGS=0/+13V,ID =11A 0.24 *) Eon includes SPD06S60 diode commutation losses mWs *) Eon includes SPD06S60 diode commutation losses mWs 0.03 0.16 Eoff E 0.02 E 0.12 0.08 Eon* 0.025 0.015 0.01 Eon* 0.04 0.005 Eoff 0 0 2 4 6 8 A ID 12 0 0 10 20 30 40 50 70 RG 19 Avalanche SOA IAR = f (tAR) par.: Tj 150 C 4 20 Avalanche energy EAS = f (Tj) par.: ID = 2.5 A, VDD = 50 V 350 A mJ 3 Tj(Start)=25C 250 2.5 E AS 200 Tj(Start)=125C IAR 2 150 1.5 100 1 0.5 50 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 s 10 tAR 4 0 20 40 60 80 100 120 160 C Tj Page 9 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 21 Drain-source breakdown voltage 22 Avalanche power losses PAR = f (f ) parameter: EAR =0.6mJ 785 SPP11N65C3 V(BR)DSS = f (Tj) 300 V W V(BR)DSS 745 725 705 685 665 645 625 605 585 -60 04 10 5 6 PAR -20 20 60 100 200 150 100 50 C 180 10 Hz f 10 Tj 23 Typ. capacitances C = f (VDS) parameter: VGS =0V, f=1 MHz 10 4 24 Typ. Coss stored energy Eoss=f(VDS) 7.5 pF Ciss 10 3 J 6 5.5 E oss 10 2 5 4.5 4 C Coss 3.5 3 2.5 10 1 Crss 2 1.5 1 0.5 10 0 0 100 200 300 400 V 600 0 0 100 200 300 400 V 600 VDS VDS Page 10 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 Definition of diodes switching characteristics Page 11 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO-220-3-1 B 10 0.4 3.7 0.2 A 1.270.13 4.44 15.38 0.6 2.8 0.2 C 5.23 0.9 13.5 0.5 3x 0.75 0.1 1.17 0.22 0.5 0.1 2.510.2 2x 2.54 0.25 M ABC All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 9.98 0.48 0.05 Page 12 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 P-TO-262-3-1 (I2-PAK) 10 0.2 A 0...0.3 B 4.4 1 0.3 8.5 1) 1) 1.27 11.6 0.3 2.4 C 4.55 0.2 13.5 0.5 0...0.15 1.05 3 x 0.75 0.1 0.5 0.1 2.4 2 x 2.54 1) 0.25 M ABC Typical Metal surface min. X = 7.25, Y = 6.9 All metal surfaces tin plated, except area of cut. P-TO-220-3-31 (FullPAK) Please refer to mounting instructions (application note AN-TO220-3-31-01) 9.25 0.2 7.55 0.05 Page 13 2003-08-15 SPP11N65C3, SPA11N65C3 SPI11N65C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 14 2003-08-15 |
Price & Availability of SPI11N65C3
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |